philips semiconductors product specification powermos transistor php3055e general description quick reference data n-channel enhancement mode symbol parameter max. unit field-effect power transistor in a plastic envelope featuring high v ds drain-source voltage 60 v avalanche energy capability, stable i d drain current (dc) 12 a blocking voltage, fast switching and p tot total power dissipation 50 w high thermal cycling performance r ds(on) drain-source on-state resistance 0.15 w with low thermal resistance. intended for use in switched mode power supplies (smps), motor control circuits and general purpose switching applications. pinning - to220ab pin configuration symbol pin description 1 gate 2 drain 3 source tab drain limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit i d continuous drain current t mb = 25 ?c; v gs = 10 v - 12 a t mb = 100 ?c; v gs = 10 v - 9 a i dm pulsed drain current t mb = 25 ?c - 48 a p d total dissipation t mb = 25 ?c - 50 w d p d / d t mb linear derating factor t mb > 25 ?c - 0.33 w/k v gs gate-source voltage - 30 v e as single pulse avalanche v dd 50 v; starting t j = 25?c; r gs = 50 w ; - 25 mj energy v gs = 10 v i as peak avalanche current v dd 50 v; starting t j = 25?c; r gs = 50 w ;- 6 a v gs = 10 v t j , t stg operating junction and - 55 175 ?c storage temperature range thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance junction to - - 3 k/w mounting base r th j-a thermal resistance junction to - 60 - k/w ambient 123 tab d g s march 1997 1 rev 1.000
philips semiconductors product specification powermos transistor php3055e electrical characteristics t j = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown v gs = 0 v; i d = 0.25 ma 60 - - v voltage d v (br)dss / drain-source breakdown v ds = v gs ; i d = 0.25 ma - 0.08 - v/k d t j voltage temperature coefficient r ds(on) drain-source on resistance v gs = 10 v; i d = 6 a - 0.1 0.15 w v gs(to) gate threshold voltage v ds = v gs ; i d = 0.25 ma 2.0 3.0 4.0 v g fs forward transconductance v ds = 50 v; i d = 6 a 2.4 4.0 - s i dss drain-source leakage current v ds = 60 v; v gs = 0 v - 0.1 25 m a v ds = 48 v; v gs = 0 v; t j = 150 ?c - 1 250 m a i gss gate-source leakage current v gs = 30 v; v ds = 0 v - 10 100 na q g(tot) total gate charge i d = 10 a; v dd = 48 v; v gs = 10 v - 10 12 nc q gs gate-source charge - 2 3 nc q gd gate-drain (miller) charge - 5.6 7 nc t d(on) turn-on delay time v dd = 30 v; i d = 10 a; - 8 - ns t r turn-on rise time r g = 24 w ; r d = 2.7 w -55-ns t d(off) turn-off delay time - 25 - ns t f turn-off fall time - 22 - ns l d internal drain inductance measured from contact screw on - 3.5 - nh tab to centre of die l d internal drain inductance measured from drain lead 6 mm - 4.5 - nh from package to centre of die l s internal source inductance measured from source lead 6 mm - 7.5 - nh from package to source bond pad c iss input capacitance v gs = 0 v; v ds = 25 v; f = 1 mhz - 220 - pf c oss output capacitance - 108 - pf c rss feedback capacitance - 48 - pf source-drain diode ratings and characteristics t j = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit i s continuous source current t mb = 25?c - - 12 a (body diode) i sm pulsed source current (body t mb = 25?c - - 48 a diode) v sd diode forward voltage i s = 10 a; v gs = 0 v - - 1.5 v t rr reverse recovery time i s = 10 a; v gs = 0 v; - 38 - ns di/dt = 100 a/ m s q rr reverse recovery charge - 0.1 - m c march 1997 2 rev 1.000
philips semiconductors product specification powermos transistor php3055e fig.1. normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 10 v fig.3. safe operating area. t mb = 25 ?c i d & i dm = f(v ds ); i dm single pulse; parameter t p fig.4. transient thermal impedance. z th j-mb = f(t); parameter d = t p /t fig.5. typical output characteristics . i d = f(v ds ); parameter v gs fig.6. typical on-state resistance . r ds(on) = f(i d ); parameter v gs 0 20 40 60 80 100 120 140 160 180 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.5 0.2 0.1 0.05 0.02 d = t p t p t t p t d 1us 10us 1ms 0.1s 10s tp, pulse widtht (s) zth j-mb, transient thermal impedance (k/w) 10 1 0.1 0.01 1s 10ms 100us 0 20 40 60 80 100 120 140 160 180 tmb / c id% normalised current derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 0 5 10 15 php3055e vds, drain-source voltage (volts) id, drain current (amps) tj = 25 c vgs = 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 10 v 1 10 100 1000 0.1 1 10 100 dc php3055e vds, drain-source voltage (volts) id, drain current (amps) 10 ms 100 ms tp = 10 us 1 ms 100 us rds(on) = vds/id 0 5 10 15 20 0 0.1 0.2 0.3 0.4 php3055e id, drain current (amps) rds(on), drain-source on resistance (ohms) vgs = 15 v tj = 25 c 10 v 7 v 6.5 v 6 v 5.5 v march 1997 3 rev 1.000
philips semiconductors product specification powermos transistor php3055e fig.7. typical transfer characteristics. i d = f(v gs ); parameter t j fig.8. typical transconductance . g fs = f(i d ); parameter t j fig.9. normalised drain-source on-state resistance. a = r ds(on) /r ds(on)25 ?c = f(t j ); i d = 10 a; v gs = 10 v fig.10. gate threshold voltage . v gs(to) = f(t j ); conditions: i d = 0.25 ma; v ds = v gs fig.11. sub-threshold drain current. i d = f(v gs) ; conditions: t j = 25 ?c; v ds = v gs fig.12. typical capacitances, c iss , c oss , c rss . c = f(v ds ); conditions: v gs = 0 v; f = 1 mhz 0246810 0 5 10 15 php3055e vgs, gate-source voltage (volts) id, drain current (amps) vds = 30 v tj = 175 c tj = 25 c -60 -20 20 60 100 140 180 tj / c vgs(to) / v 4 3 2 1 0 max. typ. min. 0 5 10 15 0 1 2 3 4 php3055e id, drain current (amps) gfs, transconductance (s) vdd = 30 v tj = 25 c tj = 175 c 0 1 2 3 4 vgs / v id / a 1e-01 1e-02 1e-03 1e-04 1e-05 1e-06 sub-threshold conduction typ 2 % 98 % -60 -20 20 60 100 140 180 tj / c normalised rds(on) = f(tj) 2.0 1.5 1.0 0.5 0 a 1 10 100 10 100 1000 php3055e vds, drain-source voltage (volts) ciss, coss, crss, junction capacitances (pf) ciss coss crss march 1997 4 rev 1.000
philips semiconductors product specification powermos transistor php3055e fig.13. typical turn-on gate-charge characteristics. v gs = f(q g ); parameter v ds fig.14. typical switching times . t d(on) , t r , t d(off) , t f = f(r g ) fig.15. normalised drain-source breakdown voltage . v (br)dss /v (br)dss 25 ?c = f(t j ) fig.16. source-drain diode characteristic. i f = f(v sds ); parameter t j fig.17. normalised unclamped inductive energy. e as % = f(t j ) fig.18. unclamped inductive test circuit. 0 5 10 15 0 5 10 15 php3055e qg, gate charge (nc) vgs, gate-source voltage (volts) vds = 30 v 48 v id = 10 a tj = 25 c 0 0.5 1 1.5 0 5 10 15 20 php3055e vsds, source-drain voltage (volts) if, source-drain diode current (amps) tj = 25 c tj = 175 c vgs = 0 v 0 20406080100 1 10 100 1000 td(off) tf php3055e rg, gate resistance (ohms) switching times (ns) tj = 25 c vdd = 30 v rd = 2.7 ohms vgs = 10 v id = 10 a tr td(on) 20 40 60 80 100 120 140 160 180 120 110 100 90 80 70 60 50 40 30 20 10 0 starting tj ( c) eas, normalised unclamped inductive energy (%) -100 -50 0 50 100 150 0.85 0.9 0.95 1 1.05 1.1 1.15 tj, junction temperature (c) normalised drain-source breakdown voltage v(br)dss @ tj v(br)dss @ 25 c l t.u.t. vdd rgs r 01 vds -id/100 + - shunt vgs 0 e as = 0.5 li d 2 v ( br ) dss /( v ( br ) dss - v dd ) march 1997 5 rev 1.000
philips semiconductors product specification powermos transistor php3055e mechanical data dimensions in mm net mass: 2 g fig.19. to220ab; pin 2 connected to mounting base. notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. refer to mounting instructions for to220 envelopes. 3. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min march 1997 6 rev 1.000
philips semiconductors product specification powermos transistor php3055e definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. march 1997 7 rev 1.000
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